Technologies

700V X³DMOS Technology

MNI has invested significant resources over the past 3 years in developing a state-of-the-art 700V X3DMOS technology that is now offered to the industry. It features 3 different levels of sophistication to meet different budgets and goals

• Level I is a basic vertical DMOS process, ideal for high-volume line powered ICs similar to ST's Viper family
• Level II is a sophisticated BCDMOS process highly suitable for high-volume line powered electronics, PI & IR solutions, LED & solar panel controllers, integrated IGBTs, high voltage battery control etc...
• Level III is a BCDMOS process with DI or trenched SOI isolation that targets applications for harsh environments like Automotive, Military, Avionics, Space.

MNI has already been 100% successful in transferring processes to customers foundries in a minimum of time and with a minimum of resources. No specific equipment is required. X3DMOS Level I and II are now ready to be ported to licensee’s foundry. Other services as well can be provided including technology enhancement or modeling and library creation.

HSPD PROCESS FOR CUSTOM EPITAXIAL INFRARED PIN DIODES

MNI designs and manufactures PIN-Diodes to customers specifications using the proprietary HSPD Process that has already been qualified in several high-volume applications of efficient infrared high-speed high-sensitivity detectors. Typical applications include IRDA modules for cell phones, TV remote, printers, transmission of pictures direct from cell phones, high speed infrared communication links etc..

This 4MHz process features a high sensitivity to infrared (high quantum efficiency) of 360nA/watt/m2, a rise time < 80ns and a low intrinsic capacitance < 7pF at Vr=1V.

It is available as is or can be extended for microwave band switches.