Presentation + Paper
21 November 2023 Stitching for high-NA: zooming in on CDU budget
Author Affiliations +
Abstract
In this publication, we consider stitching enablement for High NA EUVL, specifically ‘zooming in’ on vertical line stitching used to create a physical connection between fields on wafer. We discuss stitching CD metrology and analysis using experimental and simulation results for pitch 36 nm dense lines. Experimental results were obtained on the NXE:3400B scanner at imec. CD uniformity across wafer and through slit are investigated as well as the impact from image to image overlap variation and the contribution of reticle CD errors and mask 3D shadowing. In the previous publications, we gave an overview of stitching challenges and various interactions in the stitching zone. In this publication, we focus on the aerial image interaction. Along a stitched vertical line, there are variations in CD creating a certain CD profile. These CD variations were modeled in a rigorous simulator but also observed experimentally. In order to characterize this behavior, we perform CD profile metrology at the stitch. We investigate the root causes of CD variability at the stitch and propose control mechanisms of stitching optimization. A key control mechanism being optical proximity correction (OPC) as well as overlay control.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Natalia Davydova, Lieve van Look, Ataklti Weldeslassie, Vincent Wiaux, Laura Huddleston, Bram Slachter, Nick Pellens, Frank Timmermans, Friso Wittebrood, Eelco van Setten, and Daniel Wilson "Stitching for high-NA: zooming in on CDU budget", Proc. SPIE 12750, International Conference on Extreme Ultraviolet Lithography 2023, 1275002 (21 November 2023); https://doi.org/10.1117/12.2687703
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KEYWORDS
Critical dimension metrology

Extreme ultraviolet

Image quality

Metrology

Reticles

Zoom lenses

Overlay metrology

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